NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and efficiency over the 136 175MHz band. Features: 175MHz 12.5 Volts P = 100 Watts OUT G = 6.0dB Minimum P Common Emitter Configuration Absolute Maximum Ratings: (T = +25C unless otherwise specified) C Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current (Peak), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A C Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W D Operatin Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics CollectorBase Breakdown Voltage V I = 50mA, I = 0 36 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 100mA, V = 0 36 V (BR)CES C BE V I = 100mA, I = 0 18 V (BR)CEO C B EmitterBase Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 15 mA CES CE E ON Characteristics DC Current Gain h I = 5A, V = 5V 10 75 150 FE C CEElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Power P V = 12.5V, f = 175MHz, 100 W OUT CC PP = 25W25W IN Power Gain G 6.0 dB PE Output Capacitance C V = 12.5V, f = 1MHz 390 pF ob CB Impedance Data Input Impedance Z f = 175MHz 1.5 j0.9 IN Clamping Impedance Z f = 175MHz 0.5 j1.0 CL .215 (5.48) .205 (5.18) .122 (3.1) Dia EB .405 (10.3) Min CE .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78)