NTE353 Silicon PNP Transistor RF Power Output P = 4W 175MHz O Description: The NTE353 is designed for 12.5 Volt VHF largesignal amplifier applications required in military and industrial equipment operating to 250MHz. Features: Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggedness. Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink. Exceptional Power Output Stability versus Temperature. Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current Continuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Total Device Dissipation (T = +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W C D Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45.7mW/ C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 18 V (BR)CEO C B V I = 5mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 250 A CBO CB E I V = 15V, V = 0, T = +55C 5 mA CES CE BE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h V = 5V, I = 250mA 5 FE CE C Dynamic Characteristics Output Capacitance C V = 12.5V, I = 0, f = 100kHz 17 20 pF ob CB E Functional Test CommonEmitter Amplifier Power Gain G P = 4W, V = 12.5V, 12 dB PE OUT CC I max = 620mA, f = 175MHz C Collector Efficiency P = 4W, V = 12.5V, f = 175MHz 50 % OUT CC .122 (3.1) Dia .725 (18.42) (2 Holes) EC .250 (6.35) BE .225 (5.72) .860 (21.84) .378 (9.56) .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14)