NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V eb Collector Current Continuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A C Total Device Dissipation 25 C, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W d Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171mW/ C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to C +200 stg Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to C +200 J Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, I = 0, Note 1 35 V (Br)CEO C B CollectorEmitter Sustaining Voltage V I = 200mA, V = 0 65 V (Br)CES C BE EmitterBase Breakdown Voltage V I = 10mA, I = 0 4 V (Br)ebo E C Collector Cutoff Current I V = 30 V, I = 0 1 mA CBO CB E On Characteristics DC Current Gain H I = 200mA, V = 5.0V 5 fe C CE Note 1. Pulsed through 25mH inductorElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance C V = 30V, I = 0, f = .1 to 1MHz 22 35 pF ob CB E CommonEmitter Amplifier Power Gain G P = 20W, V = 28V, f = 175MHz 8.2 dB pe OUT CE Collector Efficiency 60 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 .100 (2.54) (9.8) .005 (0.15) Dia .168 (4.27) .750 (19.05) 8 32 NC 3A Wrench Flat