NTE360 Silicon NPN Transistor RF Power Output P = 40W 175MHz O Description: The NTE360 is designed primarily for wideband large signal amplifier stages in the 125 175MHz frequency range. Features: Specified 28 Volt, 175MHz Characteristics: Output Power = 40 Watts Minimum Gain = 7.6dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Collector Current Continuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W C D Derate above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 342mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, I = 0, Note 1 35 V (BR)CEO C B V I = 200mA, V = 0, Note 1 65 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 30V, I = 0 1 mA CBO CB E On Characteristics DC Current Gain h I 500mA, V = 5.0V 5.0 FE C = CE Dynamic Characteristics Output Capacitance C V = 30V, I = 0, f = 0.1 to 1.0MHz 45 65 pF ob CB E Note 1 Pulsed through 25mH inductor.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Functional Test CommonEmitter Amplifier Power Gain G P = 40 W, V = 28 V, f = 175MHz 7.6 8.1 dB PE OUT CE Collector Efficiency P = 40 W, V = 28 V, f = 175MHz 60 % OUT CE 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 .100 (2.54) (9.8) .005 (0.15) Dia .168 (4.27) .750 (19.05) 8 32 NC 3A Wrench Flat