NTE361 Silicon NPN Transistor RF Power Output P = 2W 512MHz O Description: The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF largesignal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: Specified 12.5 Volt, 470MHz Characteristics: Output Power = 2.0 Watts Minimum Gain = 8.0dB Efficiency = 50% Characterized with Series Equivalent LargeSignal Impedance Parameters Grounded Emitter TO39 Package for High Gain and Excellent Heat Dissipation Replaces MediumPower Stud Mounted Devices Absolute Maximum Ratings: CollectorEmitter Voltage, V 16V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector CurrentContinuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA C Total Device Dissipation T = 25C, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 16 V (BR)CEO C B V I = 50mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 1.0 mA CBO CB EElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h V = 5V, I = 100mA 20 200 FE CE C Dynamic Characteristics Output Capacitance C V = 12.5V, I = 0, f = 1MHz 15 pF ob CB E Functional Test CommonEmitter Amplifier Power Gain G P = 2W, V = 12.5V, f = 470MHz 8.0 dB PE OUT CC Collector Efficiency P = 2W, V = 12.5V, f = 470MHz 50 % OUT CC .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Collector Emitter/Case 45 .031 (.793)