NTE362 Silicon NPN Transistor RF Power Description: The NTE362 is designed for 7.0 to 15 volts, UHF large signal amplifier applications required in industrial and commercial FM equipment operating in the 400 to 960MHz range. Features: Specified 12.5 Volt, 470MHz Characteristics Power Output = 2.0 Watts Minimum Gain = 9.0dB Efficiency = 60% Minimum RF ballasting provides protection against device damage due to load mismatch Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current Continuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4V C Total Device Dissipation (T = +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0W C D Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Stud Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 in lbs Note 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. Note 2. For repeated assembly use 5 inlbs. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 16 V (BR)CEO C B V I = 50mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 1.0mA, I = 0 4.0 V (BR)EBO E C Collector Cutoff Current I V = 15V, V = 0, T = +55C 0.2 10 mA CES CE BE C I V = 15V, I = 0 1.0 CBO CB EElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit On Characteristics DC Current Gain h I = 100mA, V = 5.0V 20 80 FE C CE Dynamic Characteristics Output Capacitance C V = 12.5V, I = 0, f = 1.0MHz 11 15 pF ob CB E Functional Test CommonEmitter Amplifier Power Gain G V = 12.5 V, P = 2.0W 9 10 dB PE CC OUT I = 267mA, f = 470MHz C Collector Efficiency V = 12.5V, P = 2.0W 60 % CC out I = 240mA, f = 470MHz C B .225 (5.72) E E .530 (13.46) C .063 (1.62) .123 (3.12) .282 (7.17) Dia .005 (0.15) .630 (16.0) Seating Plane Wrench Flat .250 (6.35) Dia