NTE367 Silicon NPN Transistor RF Power Amplifier P = 45W 512MHz O Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF largesignal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: Specified 12.5V, 470MHz Characteristics: Output Power: 45W Minimum Gain: 4.8dB Efficiency: 55% Characterized with Series Equivalent LargeSignal Impedance Parameters BuiltIn Matching Network for Broadband Operation Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR 16V High Line and 50% Overdrive Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Continuous Collector Current, I C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 670mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5C/W JC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 20mA, I = 0 16 V (BR)CEO C B V I = 20mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 5mA, I 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, V = 0, T = +25C 10 mA CES CE BE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 4A, V = 5V 20 70 150 FE C CE Dynamic Characteristics Output Capacitance C V = 12.5V, I = 0, f = 1MHz 90 125 pF ob CB E Functional Tests CommonEmitter Amplifier Power Gain G V = 12.5V, P = 45W, 4.8 5.4 dB pe CC O I (Max) = 5.8A, f = 470MHz C Collector Efficiency 55 60 % Input Power P V = 12.5V, P = 45W, 13 15 W in CC O f = 470MHz Load Mismatch Stress V = 16V, f = 470MHz, No Degradation in CC VSWR = 20:1, All Phase Angles, Output Power Note 1, Note 2 Series Equivalent Input Impedance Z V = 12.5V, P = 45W, 1.4+j4.0 in CC O f = 470MHz Series Equivalent Output Impedance Z 1.2+j2.8 OL Note 1. P = 150% of Drive Requirement for 45W output 12.5V. in Note 2. = Mismatch stress factor the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture terminated in a 20:1 minimum load mismatch at all phase angles. .215 (5.48) .205 (5.18) .122 (3.1) Dia EB .405 (10.3) Min CE .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78)