X-On Electronics has gained recognition as a prominent supplier of NTE36MP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE36MP Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE36MP NTE

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Part No.	NTE36MP
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR,BJT,PAIR,NPN,140V V(BR)CEO,12; TRANSISTOR,BJT,PAIR,NPN,140V V(BR)CEO,12A I(C),TO-247AD
Datasheet:	NTE36MP Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 16.3249 ea
Line Total: USD 81.62

Availability - 0

MOQ: 5 Multiples: 1
Pack Size: 1

NTE36MP More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 02 Dec to Fri. 06 Dec MOQ : 5 Multiples : 1	5 : USD 16.3249 50 : USD 10.5122 100 : USD 9.707 200 : USD 9.0153 500 : USD 8.4143

0 Ship by Mon. 02 Dec to Fri. 06 Dec MOQ : 1 Multiples : 1	1 : USD 18.691 50 : USD 15.9008 100 : USD 14.429 250 : USD 13.4781 500 : USD 12.7008

0 Ship by Thu. 28 Nov to Mon. 02 Dec MOQ : 1 Multiples : 1	1 : USD 20.0402 2 : USD 13.1628 3 : USD 13.1476 4 : USD 12.4341

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT

We are delighted to provide the NTE36MP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE36MP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE36 (NPN) & NTE37 (PNP) Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de- signed for AF power amplifier and high current switching applications. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . 140V CEO CollectorBase Voltage, V 160V CBO EmitterBase Voltage, V 6V EBO Collector Current, I C Continuous 12A Peak . 15A Total Power Dissipation (T = +25C), P . 100W C D Operating Junction Temperature, T . +150C J Storage Temperature Range, T 40 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 80V, I = 0 0.1 mA CEO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 mA EBO BE C DC Current Gain h V = 5V, I = 1A 60 200 FE1 CE C h V = 5V, I = 6A 20 FE2 CE C Gain Bandwidth Product f V = 5V, I = 1A 15 MHz T CE C Output Capacitance C V = 10V, f = 1MHz pF ob CB NTE36 210 NTE37 300 BaseEmitter Voltage V V = 5V, I = 1A 1.5 V BE CE C CollectorEmitter Saturation Voltage V I = 5A, I = 500mA V CE(sat) C B NTE36 0.6 2.5 NTE37 1.1 Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 5mA, I = 0 160 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 5mA, R = 140 V (BR)CEO C BE I = 50mA, R = 140 V C BE EmitterBase Breakdown Voltage V I = 5mA, I = 0 6 V (BR)EBO E C 10I = 10I = I = 1A, TurnOn Time t s on B1 B2 C NTE36 PW = 20 s 0.26 NTE37 0.25 Fall Time t s f NTE36 0.68 NTE37 0.53 Storage Time t s on NTE36 6.88 NTE37 1.61 Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched comple- mentary pairs have their gain specification (h ) matched to within 10% of each other. FE .190 (4.82) .615 (15.62) .670 (17.0) .197 (5.0) Max .866 (22.0) .217 OR (5.5) .787 (Note) (20.0) .591 .590 .130 (3.3) .126 (15.02) (15.0) Dia (3.22) Dia BC E .177 (4.5) .747 .787 (19.0) (20.0) Min BC E .215 (5.47) .025 (0.65) .215 (5.47) NOTE: Either case style may be shipped depending on stock.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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