NTE376 Silicon NPN Transistor TV Power Supply Driver/Audio Output Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA C Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C j Storage Temperature Range, T 45. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 100 A, I = 0 300 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 5mA, R = 300 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 100 A, I = 0 5 V (BR)EBO E C CollectorBase Current I V = 250V, I = 0 0.1 A CBO CB E CollectorEmitter Current I V = 250V, R = 2 A CEO CE BE DC Current Gain h V = 10V, I = 50mA 40 200 FE CE C CollectorEmitter Saturation Voltage V I = 100mA, I = 10mA 0.32 1.5 V CE(sat) C B BaseEmitter Voltage V V = 10V, I = 50mA 0.66 0.9 V BE CE C Current GainBandwidth Product f V = 20V, I = 30mA 60 70 MHz T CE C CollectorBase Capacitance C V = 50V, I = 0, f = 1MHz 6.2 8 pF ob CB E.420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab