NTE377 (NPN) & NTE378 (PNP) Silicon Complementary Transistors Power Amp Driver, Output, Switch Description: The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type pack- age designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features: Low CollectorEmitter Saturation Voltage: V = 1V Max 8A CE(sat) Fast Switching Speeds Complementary Pairs Simplifies Designs Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation, P D T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W A Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W JC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W JA Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . +275C L Note 1. Pulse Width 6ms, Duty Cycle 50%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector Cutoff Current I V = 80V, V = 0 10 A CES CE BE Emitter Cutoff Current I V = 5V 100 A EBO EB ON Characteristics DC Current Gain h V = 1V, I = 2A, T = +25C 60 FE CE C J V = 1V, I = 4A, T = +25C 40 CE C J CollectorEmitter Saturation Voltage V I = 8A, I = 400mA 1.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 8A, I = 800mA 1.5 V BE(sat) C b Dynamic Characteristics Collector Capacitance C cb NTE377 V = 10V, f = 1MHz 130 pF CB test NTE378 230 pF Gain Bandwidth Product f T NTE377 I = 500mA, V = 10V, f = 20MHz 50 MHz C CE NTE378 40 MHz Switching Times Delay and Rise Time t + t d r NTE377 I = 5A, I = 500mA 300 ns C B1 NTE378 135 ns Storage Time t I = 5A, I = I = 500mA 500 ns s C B1 B2 Fall Time t f NTE377 140 ns NTE378 100 ns .420 (10.67) Max .110 (2.79) .147 (3.75) .500 (12.7) Dia Max Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab