X-On Electronics has gained recognition as a prominent supplier of NTE382 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE382 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE382 NTE

NTE382 electronic component of NTE
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See Product Specifications
Part No.NTE382
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 100V; 1A; 900mW; TO92
Datasheet: NTE382 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 2.75 ea
Line Total: USD 68.75 
Availability - 29
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 25
Multiples : 1
25 : USD 2.75
100 : USD 2.325
250 : USD 2.175
500 : USD 2.0375
1000 : USD 1.95
2500 : USD 1.9
5000 : USD 1.85
7500 : USD 1.825

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE382 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE382 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE382 (NPN) & NTE383 (PNP) Silicon Complementary Transistors Audio Frequency Driver Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 10 A, I = 0 120 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 100 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 100V, I = 0 10 A CBO CB E DC Current Gain h V = 5V, I = 150mA 160 320 FE CE C V = 5V, I = 500mA 30 CE C CollectorEmitter Saturation Voltage V I = 500mA, I = 50mA 1.0 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 150mA 1.5 V BE CE C Current GainBandwidth Product f V = 5V, I = 150mA 140 MHz T CE C Capacitance C V = 10V, I = 0, f = 1MHz 20 pF ob CB E.343 (8.73) Max .492 (12.5) Min .024 (0.62) Max E C B .102 (2.6) Max .059 (1.5) Typ .102 (2.6) Max .197 (5.0) .018 (0.48) .118 (3.0) Max .102 (2.6) Max .236 (6.0)Dia Max .102 (2.6) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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