NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multipleemitter site structure. Multipleepitaxial construction maximizes the voltampere character- istic of the device and provides fast switching speeds. Multipleemitter design ensures uniform cur- rent flow throughout the structure, which produces a high I and a large safeoperationarea. S/b The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V therefore the device can also be used in a series bridge configuration on a 220V line. The V rating of 9V eases requirements on the drive transformer in EBO inverter applications. Features: Maximum SafeAreaofOperation Low Saturation Voltages High Voltage Rating: V = 375V CER(sus) High Dissipation Rating: P = 45W T Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V CBO CollectorEmitter Sustaining Voltage With Base Open, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V CEO(sus) With Reverse Bias (V ) of 1.5V, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V BE CEX(sus) With External BaseEmitter Resistance (R ) 50 , V . . . . . . . . . . . . . . . . . . . 375V BE CER(sus) EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A B Transistor Dissipation (T +25C, V 40V), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W C CE T Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), T . . . . . . . +230C L Thermal Resistance, Junction to Case (V = 20V, I = 2.25A), R . . . . . . . . . . . . . . . . . 3.9C/W CE C JCElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorCutoff Current I V = 450V, V = 1.5V 0.5 mA CEV CE BE V = 450V, V = 1.5V, T = +125C 5.0 mA CE BE C EmitterCutoff Current I V = 9V, I = 0 1.0 mA EBO BE C CollectorEmitter Sustaining Voltage V I = 200mA, Note 1, Note 2 350 V CEO(sus) C V I = 200mA, R = 50 , Note 1, Note 2 375 V CER(sus) C BE EmitterBase Voltage V I = 0 9 V EBO C DC Forward Current h V = 1V, I = 1.2A, Note 1 12 28 50 FE CE C BaseEmitter Saturation Voltage V I = 1.2A, I = 200mA, Note 1 1.0 1.6 V BE(sat) C B I = 4A, I = 800mA, Note 1 1.3 2.0 V C B CollectorEmitter Saturation Voltage V I = 1.2A, I = 200mA, Note 1 0.15 0.5 V CE(sat) C B I = 4A, I = 800mA, Note 1 0.5 3.0 V C B Output Capacitance C V = 10V, f = 1MHz 150 pF obo CB SmallSignal Forward Current h V = 10V, I = 200mA, f = 1MHz 1 7 fe CE C Transfer Ratio Second Breakdown Collector I V = 50V, with Base forward biased, 0.9 A S/b CE Current Pulse duration (nonrepetitive) = 1sec Second Breakdown Energy E V = 4V, I = 3A, with Base reverse 0.45 mj S/b BE C biased, R = 50 , L = 100 H B Delay Time t V = 250V, 0.02 s d CC I = I = 200mA, B1 B2 Rise Time t 0.3 0.75 s r II = 1.2A = 1.2A C Storage Time t 2.8 5.0 s s Fall Time t 0.3 0.75 s f Note 1. Pulsed: Pulse Duration 350 s, Duty Factor = 2%. .485 (12.3) .295 (7.5) Dia .062 (1.57) .031 (0.78) Dia .360 (9.14) Min .960 (24.3) Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter