NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switch mode applications. Features: Fast TurnOff Times Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CEO(sus) CollectorEmitter Voltage (V = 1.5V), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850V BE CEX EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Total Power Dissipation (T = +100C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C D Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W thJC Lead Temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . . . . . . . . . . +275C L Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, L = 25mH 400 V CEO(sus) C B Collector Cutoff Current I V = 850V, V = 1.5V 0.2 mA CEX CEX BE(off) V = 850V, V = 1.5V, T = +125C 2.0 mA CEV BE(off) C I V = 850V, R = 10 0.5 mA CER CE BE V = 850V, R = 10 , T = +100C 3.0 mA CE BE C Emitter Cutoff Current I V = 5V, I = 0 0.1 mA EBO BE C EmitterBase Breakdown Voltage V I = 50mA, I = 0 7 V (BR)EBO E C Note 2. Pulse test: Pulse Width = 300 s, Duty Cycle 2%, V = 300V, V = 5V, L = 180 H. cl BE(off) CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 2) DC Current Gain h V = 5V, I = 10A 8 FE CE C CollectorEmitter Saturation Voltage V I = 10A, I = 2A 1.5 V CE(sat) C B I = 10A, I = 2A, T = +100C 2.0 V C B C I = 8A, I = 1.6A 1.5 V C B I = 8A, I = 1.6A, T = +100C 2.0 V C B C BaseEmitter Saturation Voltage V I = 10A, I = 2A 1.6 V BE(sat) C B I = 10A, I = 2A, T = +100C 1.6 V C B C Dynamic Characteristics Output Capacitance C V = 10V, I = 0, f = 1kHz 350 pF ob CB E test Switching Characteristics (Resistive Load) Delay Time t V = 300V, I = 10A, I = 2A, 0.1 0.2 s d CC C B t = 30 s, Duty Cycle = 2%, p Rise Time t 0.4 0.7 s r VV = 5 = 5VV BE(off) Storage Time t 1.3 2.0 s s Fall Time t 0.2 0.4 s f Switching Characteristics (Inductive Load, Clamped) Storage Time t I = 10A, I = 2A, T = +25C 1.3 s sv C B1 C Fall Time t 0.06 s fi Storage Time t I = 10A, I = 2A, T = +100C 1.5 2.5 s sv C B1 C Crossover Time t 0.3 0.6 s c Fall Time t 0.17 0.35 s fi Note 2. Pulse test: Pulse Width = 300 s, Duty Cycle 2%, V = 300V, V = 5V, L = 180 H. cl BE(off) C .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane COLLECTOR .312 (7.93) Min .040 (1.02) BASE Emitter 1.187 (30.16) .665 .215 (5.45) (16.9) .156 (3.96) Dia EMITTER (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case