NTE390 (NPN) & NTE391 (PNP) Silicon Complementary Transistors General Purpose TO3PN Type Package Description: The NTE390 (NPN) and NTE391 (PNP) are silicon complementary transistors in a TO3PN type package designed for general purpose power amplifier and switching applications. Features: 10A Collector Current Low Leakage Current: I = 0.7mA V = 60V CEO CE Excellent DC Gain: h = 40 Typ 3A FE High Current Gain Bandwidth Product: h = 3 Min I = 500mA, f = 1MHz fe C Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 100V CEO Collector Base Voltage, V ........................................................ 100V CB EmitterBase Voltage, V ........................................................... 5V EB Collector Current, I C Continuous .................................................................. 10A Peak (Note 1) ................................................................ 15A Continuous Base Current, I .......................................................... 3A B Total Power Dissipation (T = +25C), P ............................................ 80W C D Derate Above 25 C ...................................................... 0.64W/ C Operating Junction Temperature Range, T .................................. 65 to +150C J Storage Temperature Range, T .......................................... 65 to +150C stg Thermal Resistance, Junction toCase, R .................................... 1.56 C/W thJC Thermal Resistance, Junction toAmbient, R .................................. 35.7 C/W thJA Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle 10%. Rev. 215Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 30mA, I = 0, Note 2 100 V CEO(sus) C B CollectorEmitter Cutoff Current I V = 60V, I = 0 0.7 mA CEO CE B I V = 100V, V = 0 0.4 mA CES CE EB EmitterBase Cutoff Current I V = 5V, I = 0 1 mA EBO EB C ON Characteristics (Note 2) DC Current Gain h I = 1A, V = 4V 40 FE C CE I = 3A, V = 4V 20 100 C CE CollectorEmitter Saturation Voltage V I = 3A, I = 0.3A 1 V CE(sat) C B I = 10A, I = 2.5A 4 V C B BaseEmitter ON Voltage V I = 3A, V = 4V 1.6 V BE(on) C CE I = 10A, V = 4V 3.0 V C CE Dynamic Characteristics SmallSignal Current Gain h I = 0.5A, V = 10V, f = 1kHz 20 fe C CE CurrentGain Bandwidth Product f I = 0.5A, V = 10V, 3 MHz T C CE f = 1MHz, Note 3 Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. Note 3. f = h f T fe test .189 (4.8) .614 (15.6) .787 (20.0) .590 .138 (15.0) (3.5) Dia .889 (22.6) BC E .215 (5.45)