NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch TO3PN Type Package Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO3PN type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: CollectorEmitter Voltage (V = 0), V ............................................ 500V BE CES CollectorEmitter Voltage (I = 0), V .............................................. 400V B CEO EmitterBase Voltage (I = 0), V .................................................... 5V C EB Collector Current, I C Continuous ................................................................... 3A Peak ........................................................................ 5A Continuous Base Current, I ...................................................... 600mA B Total Power Dissipation (T = +25C), P ........................................... 100W C tot Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 65 to +150C stg Thermal Resistance, Junction toCase, R .................................... 1.25 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Cutoff Current I V = 300V, I = 0 1 mA CEO CE B I V = 500V, V = 0 1 mA CES CE EB EmitterBase Cutoff Current I V = 5V, I = 0 1 mA EBO EB C CollectorEmitter Sustaining Voltage V I = 30mA, I = 0, Note 1 400 V CEO(sus) C B CollectorEmitter Saturation Voltage V I = 3A, I = 0.6A, Note 1 1.5 V CE(sat) C B BaseEmitter ON Voltage V I = 3A, V = 10V, Note 1 1.5 V BE(on) C CE DC Current Gain h I = 0.3A, V = 10V 30 150 FE C CE I = 3A, V = 10V 10 C CE Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 1.5%. Rev. 215Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal Current Gain h I = 0.2A, V = 10V, f = 1kHz 30 fe C CE I = 0.2A, V = 10V, f = 1MHz 2.5 C CE Second Breakdown Unclamped Energy E V = 20V, R = 100, l = 30mH 100 mJ s/b BE BE TurnOn Time t I = 1A, I = 100mA, V = 200V 0.2 s on C B1 CC TurnOff Time t I = 1A, I = I = 100mA, 0.2 s off C B1 B2 V = 200V CC .614 (15.6) .189 (4.8) .787 (20.0) .590 .138 (15.0) (3.5) Dia .889 (22.6) BC E .215 (5.45)