NTE396 Silicon NPN Transistor Power Amplifier & High Speed Switch (Compl to NTE397) Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7mW/C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 50mA, I = 0, Note 1 350 V CEO(sus) C B Collector Cutoff Current I V = 300V, I = 0 20 A CEO CE B I V = 450V, V = 1.5V 500 A CEX CE BE I V = 360V, I = 0 20 A CBO CB E Emitter Cutoff Current I V = 6V, I = 0 20 A EBO EB C ON Characteristics (Note 1) DC Current Gain h I = 2mA, V = 10V 30 FE C CE I = 20mA, V = 10V 40 160 C CE CollectorEmitter Saturation Voltage V I = 50mA, I = 4mA 0.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 50mA, I = 4mA 1.3 V BE(sat) C B Note 1. Pulse Test Pulse Width 300 s, Duty Cycle 2%. CAUTION: The sustaining voltage must not be measured on a curve tracer.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal Characteristics Current GainBandwidth Product f I = 10mA, V = 10V, f = 50MHz 15 MHz T C CE Output Capacitance C V = 10V, I = 0, f = 1MHz 10 pF obo CB E Input Capacitance C V = 5V, I = 0, f = 1MHz 75 pF ibo CB C SmallSignal Current Gain h I = 5mA, V = 10V, f = 1MHz 25 fe C CE Real Part of Input Impedance Re(h ) V = 10V, I = 5mA, f = 1MHz 300 ie CE C .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)