NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for largescale poweramplifier and driver applications to 300MHz. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorBase Voltage,V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A C Power Dissipation (T = +25C), P 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6W C D Derate Above 25C 66.3mW/. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, Note 1 18 V CEO(sus) C CollectorEmitter Breakdown Voltage V I = 0.25mA, I = 0 36 V (BR)CEO C E EmitterBase Breakdown Voltage V I = 1mA, I = 0 4 V (BR)EBO E C Dynamic Characteristics Current Gain Bandwidth Product f I = 100mA, V = 13.6V, f = 100MHz 350 MHz T C CE Output Capacitance C V = 13.6V, I = 0, f = 100kHz 12.5 20.0 pF ob CB E Functional Tests Power Input P R = 50 , P = 12W, f = 175MHz 4.0 W in L out CommonEmitter Amplifier Power Gain G 4.77 5.0 dB pe Collector Efficiency 80 % Note 1. Pulsed thru a 25mH inductor..200 (5.08) Collector Emitter/Stud Dia .430 (10.92) Base .340 (8.63) Dia .038 (0.98) Dia .480 (12.19) .320 Max (8.22) Max .455 .113 (2.88) .078 (11.58) (1.97) Max Max 1032 NF2A