X-On Electronics has gained recognition as a prominent supplier of NTE475 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE475 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE475 NTE

NTE475 electronic component of NTE
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See Product Specifications
Part No.NTE475
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; RF; 18V; 1.5A; 11.6W; TO60; Pout:4W
Datasheet: NTE475 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 96.8625 ea
Line Total: USD 96.86 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 96.8625
10 : USD 58.32
25 : USD 54.432
50 : USD 51.03

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 75.5671

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Kind Of Transistor
Type Of Transistor
Output Power
Collector-Emitter Voltage
Collector Current
Power Dissipation
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE475 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE475 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for largescale poweramplifier and driver applications to 300MHz. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorBase Voltage,V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A C Power Dissipation (T = +25C), P 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6W C D Derate Above 25C 66.3mW/. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, Note 1 18 V CEO(sus) C CollectorEmitter Breakdown Voltage V I = 0.25mA, I = 0 36 V (BR)CEO C E EmitterBase Breakdown Voltage V I = 1mA, I = 0 4 V (BR)EBO E C Dynamic Characteristics Current Gain Bandwidth Product f I = 100mA, V = 13.6V, f = 100MHz 350 MHz T C CE Output Capacitance C V = 13.6V, I = 0, f = 100kHz 12.5 20.0 pF ob CB E Functional Tests Power Input P R = 50 , P = 12W, f = 175MHz 4.0 W in L out CommonEmitter Amplifier Power Gain G 4.77 5.0 dB pe Collector Efficiency 80 % Note 1. Pulsed thru a 25mH inductor..200 (5.08) Collector Emitter/Stud Dia .430 (10.92) Base .340 (8.63) Dia .038 (0.98) Dia .480 (12.19) .320 Max (8.22) Max .455 .113 (2.88) .078 (11.58) (1.97) Max Max 1032 NF2A

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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