X-On Electronics has gained recognition as a prominent supplier of NTE475 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE475 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE475 NTE

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Part No.	NTE475
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 18V; 1.5A; 11.6W; TO60; Pout:4W
Datasheet:	NTE475 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 93.7875 ea
Line Total: USD 93.79

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

NTE475 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 1 Multiples : 1	1 : USD 93.7875 10 : USD 56.4686 25 : USD 52.704 50 : USD 49.41

0 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 73.1681

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Screw Screw
Case To60 To60
Kind Of Transistor Rf Rf
Type Of Transistor Npn Npn
Output Power 4 W 4 W
Collector-Emitter Voltage 18 V 18 V
Collector Current 1.5 A 1.5 A
Power Dissipation 11.6 W 11.6 W
Frequency 350 MHz 350 MHz

We are delighted to provide the NTE475 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE475 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for largescale poweramplifier and driver applications to 300MHz. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorBase Voltage,V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A C Power Dissipation (T = +25C), P 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6W C D Derate Above 25C 66.3mW/. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, Note 1 18 V CEO(sus) C CollectorEmitter Breakdown Voltage V I = 0.25mA, I = 0 36 V (BR)CEO C E EmitterBase Breakdown Voltage V I = 1mA, I = 0 4 V (BR)EBO E C Dynamic Characteristics Current Gain Bandwidth Product f I = 100mA, V = 13.6V, f = 100MHz 350 MHz T C CE Output Capacitance C V = 13.6V, I = 0, f = 100kHz 12.5 20.0 pF ob CB E Functional Tests Power Input P R = 50 , P = 12W, f = 175MHz 4.0 W in L out CommonEmitter Amplifier Power Gain G 4.77 5.0 dB pe Collector Efficiency 80 % Note 1. Pulsed thru a 25mH inductor..200 (5.08) Collector Emitter/Stud Dia .430 (10.92) Base .340 (8.63) Dia .038 (0.98) Dia .480 (12.19) .320 Max (8.22) Max .455 .113 (2.88) .078 (11.58) (1.97) Max Max 1032 NF2A

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

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