NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: High Power Gain: G 10.7dB V = 13.5V, P = 3.5W, f = 175MHz pe CC O TO39 Metal Sealed Package for High Reliability Emitter Electrode is Connected Electrically to the Case Application: 1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications. Absolute Maximum Ratings: (T = +25C unless otherwise specified) C CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C j Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C/W thJA Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit EmitterBase Breakdown Voltage V 4 V (BR)EBO CollectorBase Breakdown Voltage V I = 10mA, I = 0 35 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 50A, R = 17 V (BR)CEO C BEElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 25V, I = 0 500 A CBO CB E Emitter Cutoff Current I V = 3V, I = 0 500 A EBO EB O DC Forward Current Gain h V = 10V, I = 0.1A, Note 1 10 50 180 FE CE C Output Power P 3.5 4.0 W V = 13.5V Pin = 0.3W, O CC f = 175MHz Collector Efficiency 50 60 % Note 1. Pulse Test: P = 150 s duty = 5%. W .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter/Case Collector 45 .031 (.793)