NTE51 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE51 is a silicon NPN transistor in a TO220 type package designed for highvoltage, high speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V SWITCHMODE applications such as switching regulators, Inverters, motor con- trols, solenoid/relay drivers and deflection circuits. Features: Reverse Bias SOA with Inductive Loads T = +100C C 700V Blocking Capability Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V CEV Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V EBO Collector Current,I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Emitter Current, I E Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W A D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W C D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W thJA Lead Temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . . . . . . . . . . +275C L Electrical Characteristics: (T = +25C unless otherwise Specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 1) CollectorEmitter Sustaining Voltage V I = 10mA, I = 0 400 V CEO(sus) c B Collector Cutoff Current I V = 700V, V = 1.5V 1 mA CEV CEV BE(off) V = 700V, V = 1.5V, 1 mA CEV BE(off) T = +100C C Emitter Cutoff Current I V = 9V, I = 0 1 mA EBO EB c Note 1. Pulse test: Pulse Width = 300 s, Duty Cycle = 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise Specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h V = 5V, I = 1A 10 60 FE CE C V = 5V, I = 2A 8 40 CE C CollectorEmitter Saturation Voltage V I = 1A, I = 0.2A 0.5 V CE(sat) C B I = 2A, I = 0.5A 0.6 V C B I = 2A, I = 0.5A, T = +100C 1.0 V C B C I = 4A, I = 1A 1.0 V C B Dynamics Characteristics Current GainBandwidth Product f V = 10V, I = 500mA, f = 1MHz 4 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 0.1MHz 65 pF ob CB E Switching Characteristics (Resistive Load) Delay Time t V = 125V, I = 2A, I = I = 0.4A, 0.025 0.1 s d CC C B1 B2 t = 25 s, Duty Cycle 1% p Rise Time t 0.3 0.7 s r Storage Time t 1.7 4.0 s s Fall Time t 0.4 0.9 s f Switching Characteristics (Inductive Load, Clamped) Voltage Storage Time t 0.9 4.0 s V = 300V, I = 0.4A, sv clamp B1 V = 5V BE(off) Crossover Time t 0.32 0.9 s c Fall Time t 0.16 s fi Note 1. Pulse test: Pulse Width = 300 s, Duty Cycle = 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab