X-On Electronics has gained recognition as a prominent supplier of NTE58 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE58 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE58 NTE

NTE58 electronic component of NTE
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See Product Specifications
Part No.NTE58
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 200V; 17A; 200W
Datasheet: NTE58 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 15.85 ea
Line Total: USD 79.25 
Availability - 10
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
10
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 5
Multiples : 1
5 : USD 15.85
25 : USD 13.1625
50 : USD 12.9625
100 : USD 12.4
250 : USD 11.7125
500 : USD 11.4125
1000 : USD 11.1125

4
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 18.62
2 : USD 13.328
4 : USD 12.6

   
Manufacturer
Product Category
Polarisation
Mounting
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE58 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE58 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE58 (NPN) & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: High Power Dissipation Wide Safe Operating Area Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17A C Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W FL C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 50mA 200 V (BR)CEO C Maximum Collector Cutoff Current I V = 200V, I = 0 0.1 mA CBO CB E Maximum Emitter Cutoff Current I V = 6V, I = 0 0.1 mA EBO EB C DC Forward Current Transfer Ratio h V = 4V, I = 8A 20 FE CE C CollectorEmitter Saturation Voltage V I = 10A, I = 1A 2.5 V CE(sat) C B Second Breakdown Collector Current I V = 100V, t = 1sec 1 A S/b CE Cutoff Frequency f V = 12V, I = 1A 20 MHz T CE E1.430 (36.32) .961 (24.42) .843 (21.42) BC E .788 (20.02) Min .215 (5.48) .118 (3.0) .244 (6.2) Max Collector connected to Tab

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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