NTE63 Silicon NPN Transistor High Gain, Low Noise Amp Description: The NTE63 is a silicon NPN high frequency transistor designed primarily for use in highgain, low noise tuned and wiseband smallsignal amplifiers and applications requiring fast switching times. Features: High Current GainBandwidth Product: f = 5GHz Typ f = 1GHz T High Power Gain: G = 12.5dB Min f = 1GHz pe Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V EBO Continuous Collector Current, I 40mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Total Device Dissipation (T = +50C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW L D Derate Above 50C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoLead, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250C/W thJL Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0 12 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 0.1mA, I = 0 20 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 0.1mA, I = 0 2 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 50 nA CBO CB EElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 30mA, V = 10V 30 200 FE C CE Dynamic Characteristics Current GainBandwidth Product f I = 30mA, V = 10V, 5.0 GHz T C CE f = 1GHz CollectorBase Capacitance C V = 10V, I = 0, f = 1MHz 0.6 1.0 pF cb CB E Functional Tests Noise Figure NF I = 5mA, V = 10V, f = 1GHz 2.5 dB MIN C CE I = 5mA, V = 10V, f = 2GHz 4.0 dB C CE Power Gain at Optimum Noise Figure G I = 5mA, V = 10V, f = 1GHz 10 dB NF C CE I = 5mA, V = 10V, f = 2GHz 6 dB C CE G I = 30mA, V = 10V, f = 1GHz 12.5 dB Maximum Available Power Gain max C CE (Note 1) I = 30mA, V = 10V, f = 2GHz 7.5 dB C CE 2 2 2 Note1.G = S / (I S ) (I S ) max 21 11 22 .075 (1.9) Min C Seating Plane .770 (19.5) Max EE .190 (4.83) Dia .325 (8.27) Max B .036 (0.92)