NTE65 Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV Description: The NTE65 is silicon NPN transistor designed primarily for use in highgain, lownoise, smallsignal amplifier and also used in applications requiring fast switching times. Features: High CurrentGain Bandwidth Product Low Noise Figure High Power Gain Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA C Total Device Dissipation (T = +60C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mW A D Derate Above 60C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thremal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0 15 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 0.1mA, I = 0 20 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 0.1mA, I = 0 3 V (BR)EBO E C Collector Cutoff Current I V = 10V, I = 0 50 nA CBO CB E ON Characteristics DC Current Gain h V = 10V, I = 14mA 25 250 FE CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics CurrentGain Bandwidth Product f V = 10V, I = 14mA, f = 0.5GHz 5.0 GHz T CE C CollectorBase Capacitance C V = 10V, I = 0, f = 1MHz 0.5 1.0 pF cb CB E Functional Tests Noise Figure NF V = 10V, I = 2mA, f = 0.5GHz 2.4 dB CE C V = 10V, I = 2mA, f = 1.0GHz 3.0 dB CE C Power Gain at Optimum Noise Figure G V = 10V, I = 2mA, f = 0.5GHz 15 dB NF CE C V = 10V, I = 2mA, f = 1.0GHz 10 dB CE C Maximum Available Power Gain G V = 10V, I = 2mA, f = 0.5GHz 18 dB max CE C (Note 1) V = 10V, I = 2mA, f = 1.0GHz 12 dB CE C 2 S 21 G = max Note 1. 2 2 (I S ) (I S ) 11 22 .205 (5.2) Dia Max .039 (1.0) .005 (0.15) .098 (2.5) Emitter .197 (5.0) .147 (3.75) Collector Base Max .354 (9.0) .197 5.0)