NTE69 Silicon NPN Transistor UHF/VHF Amplifier Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW A D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W C D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Operating Junction Temperature Tange, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W thJC Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W thJA Note 1 R is measured with the device soldered into a typical printed circuit board. thJA Electrical Characteristics: (T = +25C unless otherwise noted) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0, Note 2 25 V (BR)CEO C B ColletorBase Breakdown Voltage V I = 100 A, I = 0 35 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 100 A, I = 0 3 V (BR)EBO E C ON Characteristics DC Current Gain h V = 4V, I = 4mA 25 60 FE CE C CollectorEmitter Saturation Voltage V I = 10mA, I = 1mA 200 350 mV CE(sat) C B BaseEmitter Saturation Voltage V I = 10mA, I = 1mA 750 950 mV BE(sat) C B SmallSignal Characteristics Current GainBandwidth Product f V = 12V, I = 4mA, f = 100MHz 750 1100 MHz T CE C Output Capaciatnce C V = 10V, I = 0, f = 1MHz 0.8 1.0 pF obo CB E CollectorBase Time Constant rbC V = 12V, I = 4mA, f = 31.8MHz 9.5 ps c CE E Note 2 Pulse test: Pulse Width 300 s, Duty Cycle 2.0%.135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min B E C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max