NTE70 Silicon NPN Transistor High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and en- hances long term reliability. Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A C Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A B Total Power Dissipation (T = +25C), P 250W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C D Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 50mA 150 V (BR)CEO C Emitter Cutoff Current I V = 6V 100 A EBO EB Collector Cutoff Current I V = Rated V , V = 1.5V 10 A CEX CE CB EB V = Rated V , V = 1.5V, T = +150C 1.0 mA CE CB EB C ON Characteristics (Note 1) DC Current Gain h V = 4V, I = 20A 50 FE CE C CollectorEmitter Saturation Voltage V I = 50A, I = 10A 3.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 20A, I = 2A 1.8 V BE(sat) C B I = 50A, I = 10A 3.5 V C B Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics SmallSignal Current Gain h V = 10V, I = 1A, f = 1MHz 3.0 fe CE C CollectorBase Capacitance C V = 10V, I = 0, f = 0.1MHz 600 pF ob CB E Rise Time t 0.35 s r V = 80V, I = 20A, CC C Storage Time t 0.80 s s II = 2 = 2AA, I, I = 2 = 2AA B1 B2 Fall Time t 0.25 s f Base .500 .865 (12.7) (21.95) Collector/Stud Emitter .760 (19.3) Dia .083 (2.1) Dia .083 (2.1) Dia .984 (25.0) .503 (12.6) .105 .129 (3.3) .477 (2.65) (12.1) Max 5/1624 UNF