NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability. Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V CEO EmitterBase VOltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A C Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W C D Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise spcified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA 150 V (BR)CEO(sus) C Emitte Cutoff Current I V = 10V 250 A EBO EB Collector Cutoff Current I V = 150V, V = 1.5V 2 mA CEX CE BE V = 150V, V = 1.5V, 20 mA CE BE T = +150C C ON Characteristics (Note 1) DC Current Gain h V = 3V, I = 10A 10 50 FE CE C Collector Saturation Voltage V I = 10A, I = 1.5A 1.5 V CE(sat) C B BaseEmitter Voltage V I = 10A, I = 1.5A 2.5 V BE C B Note 1. Pulse test: Pulse Width = 300 s, Duy Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise spcified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics SmallSignal Current Gain h V = 3V, I = 10A, f = 1MHz 0.6 fe CE C TurnOn Time t V = 30V, I = 10A, I = 1.5A, 3.5 s on CC C B1 I = 1.5A B2 TurnOff Time t 12.0 s off Rise Time t 3.5 s r Storage Time t 6.0 s s Fall Time t 6.0 s f Base .500 .865 (12.7) (21.95) Emitter Collector/Stud .760 (19.3) Dia .083 (2.1) Dia .083 (2.1) Dia .984 (25.0) .503 (12.6) .105 .129 (3.3) .477 (2.65) (12.1) Max 5/1624 UNF