NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: High Power: 100W T = +50C, V = 40V C CE High Voltage: V = 80V Min CEO High Current Saturation Voltage: V = 1.5V 10A CE(sat) High Frequency: f = 30MHz Min T Isolated Collector Package, No Isolating hardware Required Absolute Maximum Ratings: (Note 1) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CES CollectorEmitter Voltage (Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C Total Power Dissipation (T = +50C, V = 40V), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C CE T Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Lead Temperature (During Soldering, 60sec max), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300C L Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may be impaired. Note 2. This rating refers to a high current point where collectoremitter voltage is lowest. Electrical Characteistics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, Notes 2 & 3 80 V CEO(sus) C B CollectorEmitter Breakdown Voltage V I = 1mA, V = 0 100 V (BR)CES) C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 6 V (BR)EBO E C DC Pulse Current Gain (Note 3) h I = 100mA, V = 5V 50 95 FE C CE I = 5A, V = 5V 70 108 200 C CE I = 5A, V = 5V, T = 55C 35 51 C CE C I = 10A, V = 5V 45 91 C CE Note 2. This rating refers to a high current point where collectoremitter voltage is lowest. Note 3. Pulse Conditions: Pulse Width = 300 s, Duty Cycle = 1%.Electrical Characteistics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit High Frequency Current Gain h I = 2A, V = 5V, f = 20MHz 2.0 2.8 fe C CE CollectorEmitter Saturation Voltage V I = 5A, I = 0.5A, Note 3 0.55 0.9 V CE(sat) C B I = 10A, I = 1A, Note 3 1.1 1.5 V C B BaseEmitter Saturation Voltage V I = 5A, I = 0.5A, Note 3 1.2 1.8 V BE(sat) C B I = 10A, I = 1A, Note 3 1.7 2.2 V C B BaseEmitter ON Voltage V I = 5A, V = 5V, Note 3 1.8 V BE(on) C CE Collector Cutoff Current I V = 60V, V = 0 0.014 1.0 A CES CE BE Collector Reverse Current I V = 60V, V = 2V, T = +150C 500 A CEX CE EB C Emitter Cutoff Current I V = 5V, I = 0 1.0 A EBO EB C CollectorBase Capacitance C V = 10V, I = 0, f = 1MHz 235 275 pF cb CB E Note 3. Pulse Conditions: Pulse Width = 300 s, Duty Cycle = 1%. Base .400 .682 (10.16) (17.32) Emitter Collector/ Isolated Stud .600 (19.15) Dia .061 (1.53) Dia .755 (19.15) .412 (10.44) .115 .090 (2.28) Max .440 (2.93) (11.17) 1/428 UNF2A