NTE75 Silicon NPN Transistor High Power Amplifier, Switch (Stud Mount) Description: The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for power supply, pulse amplifier, and similar high efficiency power switching applications. Features: Fast Switching: t , t = 300ns (Max) r f Low Saturation Voltage: 250mV max 1A Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V EBO DC Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A C Power Dissipation, P D T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W A T = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W C Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.33C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 10 A 110 V (BR)CBO C CollectorEmitter Breakdown Voltage V I = 100mA, Note 1 80 V (BR)CEO C EmitterBase Breakdown Voltage V I = 10 A 8 V (BR)EBO E CollectorEmitter Cutoff Current I V = 60V 100 A CEO CE I V = 110V, V = 500mV 10 A CEX CE EB CollectorBase Cutoff Current I V = 80V 0.4 A CBO CB EmitterBase Cutoff Current I V = 6V 0.4 A EBO EB Note 1. Pulse Width = 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DC Current Gain (Note 1) h V = 5V, I = 50mA 40 FE CE C V = 5V, I = 1A 40 120 CE C V = 5V, I = 1A, T = 65C 15 CE C A V = 5V, I = 5A 15 CE C Collector Saturation Voltage V I = 1A, I = 100mA, Note 1 0.25 V CE(sat) C B I = 5A, I = 500mA, Note 1 1.5 V C B Base Saturation Voltage V I = 1A, I = 100mA, Note 1 1.2 V BE(sat) C B Base ON Voltage V V = 2V, I = 1A, Note 1 1.2 V BE(on) CE C AC Current Gain h V = 5V, I = 50mA, f = 1kHz 40 120 FE CE C Current GainBandwidth Product f V = 10V, I = 1A, f = 10MHz 20 120 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 150 pF ob CE E Delay Time t V = 20V, I = 1A, 60 ns d CC C I = I = 100mA, B1 B2 Rise Time t 300 ns r Pulse Width = 2Pulse Width = 2 s,s, Duty Cycle 2%, Storage Time t 1.7 s s Source Impedance = 50 Fall Time t 300 ns f Note 1. Pulse Width = 300 s, Duty Cycle 2%. .190 (4.82) Dia Base .432 (10.95) Emitter Collector/ Stud .347 (8.82) Dia .760 (19.3) Max .370 (9.39) .078 .115 (2.92) .420 (1.97) (10.66) Max 1032 NF2A