NTE87 (NPN) & NTE88 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DCtoDC converters or inverters. Features: High Safe Operating Area: 1.2A 100V Completely Characterized for Linear Operation High DC Current Gain: h = 20 Min I = 2A FE C Low Saturation Voltage: 2V For Low Distortion Complementry Designs Absolute Maximum Ratings: CollectorEmitter Voltage, V . 250V CEO(sus) CollectorEmitter Voltage, V . 250V CEX EmitterBase Voltage, V . 5V EB Collector Current, I C Continuous 10A Peak (Note 2) 15A Base Current, I B Continuous . 2A Peak (Note 2) . 5A Emitter Current, I E Continuous 12A Peak (Note 2) 20A Total Power Dissipation (T = +25C), P . 200W C D Derate Above 25C 1.14W/C Operating Junction Temperature Range, T 65 to +200C J Storage Temperature Range, T 65 to +200C stg Thermal Resistance, JunctiontoCase, R . 0.875C/W thJC Lead Temperature (During Soldering), T . +265C L Note 1. Matched complementary pairs are available upon request (NTE88MCP). Matched comple- mentary pairs have their gain specification (h ) matched to within 10% of each other. FE Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, Note 3 250 V CEO(sus) C Collector Cutoff Current I V = 250V 1 mA CEO CE I V = 250V, V = 1.5V 500 A CEX CE BE(off) Emitter Cutoff Current I V = 5V 500 A EBO EB Second Breakdown I V = 40V, t = 0.5s (nonrepetitive) 5 A Second Breakdown Collector Current S/b CE with Base Forward Bias V = 100V, t = 0.5s (nonrepetitive) 1.4 A CE ON Characteristics (Note 3) DC Current Gain h V = 2V, I = 2A 20 100 FE CE C V = 2V, I = 4A 5 CE C CollectorEmitter Saturation Voltage V I = 2A, I = 200mA 0.8 V CE(sat) C B I = 4A, I = 400mA 2.5 V C B BaseEmitter On Voltage V V = 2V, I = 4A 2 V BE(on) CE C Dynamic Characteristics Current GainBandwidth Product f V = 10V, I = 1A, f = 1MHz 4 MHz T CE C test Output Capacitance C V = 10V, I = 0, f = 1MHz 500 pF ob CB E test Note 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case