BAP51-04W,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP51-04W General purpose PIN diode Preliminary specification 2002 Feb 19Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-04W FEATURES PINNING Two elements in series configuration in a small SMD PIN DESCRIPTION plastic package 1 anode Low diode capacitance 2 cathode Low diode forward resistance. 3 common connection APPLICATIONS 3 3 handbook, halfpage General RF applications. 1 2 DESCRIPTION 12 Two planar PIN diodes in series configuration in a SOT323 small SMD plastic package. Top view MAM391 Marking code: W6- Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode V continuous reverse voltage 50 V R I continuous forward current 50 mA F P total power dissipation T = 90 C 240 mW tot s T storage temperature 65 +150 C stg T junction temperature 65 +150 C j 2002 Feb 19 2