Product Information

BAS116

BAS116 electronic component of NXP

Datasheet
Diodes - General Purpose, Power, Switching Switching diode 225 mW
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2007 ea
Line Total: USD 1

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 5
Multiples : 1

Stock Image

BAS116
NXP

5 : USD 0.2092
10 : USD 0.1482
100 : USD 0.0803
500 : USD 0.0581
1000 : USD 0.036
5000 : USD 0.0287

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
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Additional Infomation About Product

BAS116 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features Low power loss, high current capability, low VF B Surface device type mounting E Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate C G D Pb free version and RoHS compliant Green compound (Halogen free) with suffix on packing code and prefix on date code Unit (mm) Unit (inch) Dimensions Mechanical Data Min Max Min Max Case : SOT- 23 small outline plastic package A 1.50 1.70 0.059 0.067 B 3.55 3.85 0.140 0.152 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed C 0.45 0.65 0.018 0.026 High temperature soldering guaranteed: 260C/10s D 2.60 2.80 0.102 0.11 Weight : 0.008gram (approximately) E 1.05 1.25 0.041 0.049 F 0.08 0.15 0.003 0.006 G 0.02 REF 0.50 REF Ordering Information Part No. Package Packing BAS116 RF SOT-23 3Kpcs/7 Reel Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Power Dissipation PD 225 mW Repetitive Peak Reverse Voltage V 75 V RRM Mean Forward Current Io 200 mA Non-Repetitive Peak Forward Surge Current t= 1.0s IFSM 500 mA Thermal Resistance (Junction to Ambient) (Note 1) R JA 330 C/W Junction and Storage Temperature Range TJ, TSTG -55 to + 150 C Electrical Characteristics Type Number Symbol Min Max Units Reverse Breakdown Voltage I = 100A V(BR) 75 - V R - 0.9 IF= 1.0mA IF= 10mA - 1.0 Forward Voltage VF V - 1.1 IF= 50mA IF= 150mA - 1.25 Reverse Leakage Current V = 75V IR - 5 nA R CJ - 2.0 pF Junction Capacitance VR=0, f=1.0MHz Reverse Recovery Time (Note 2) Trr - 3.0 ns Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: I =10mA, I =10mA, R =100 I =1mA F R L RR Version : B09 BAS116 225mW SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Reverse Current vs Reverse Voltage FIG 1 Typical Forward Characteristics 10000 1000 100 1000 Ta=25C 10 Ta=25C 100 1 10 0.1 0.01 1 0 20 40 60 80 100 120 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Reverse Volatge (V) Instantaneous Forward Volatge (V) FIG 3 Admissible Power Dissipation Curve FIG 4 Typical Junction Capacitance 250 2 1.6 200 150 1.2 100 0.8 50 0.4 0 0 0 25 50 75 100 125 150 175 0 4 8 12 16 20 Reverse Voltage (V) Ambient Temperature (C) Version : B09 Power Dissipation (mW) Instantaneous Forward Current (mA) Reverse Current (uA) Junction Capacitance (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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