BAS116 NXP

BAS116 225mW SMD Switching Diode Small Signal Diode SOT-23 F A Features Low power loss, high current capability, low VF B Surface device type mounting E Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate C G D Pb free version and RoHS compliant Green compound (Halogen free) with suffix on packing code and prefix on date code Unit (mm) Unit (inch) Dimensions Mechanical Data Min Max Min Max Case : SOT- 23 small outline plastic package A 1.50 1.70 0.059 0.067 B 3.55 3.85 0.140 0.152 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed C 0.45 0.65 0.018 0.026 High temperature soldering guaranteed: 260C/10s D 2.60 2.80 0.102 0.11 Weight : 0.008gram (approximately) E 1.05 1.25 0.041 0.049 F 0.08 0.15 0.003 0.006 G 0.02 REF 0.50 REF Ordering Information Part No. Package Packing BAS116 RF SOT-23 3Kpcs/7 Reel Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units Power Dissipation PD 225 mW Repetitive Peak Reverse Voltage V 75 V RRM Mean Forward Current Io 200 mA Non-Repetitive Peak Forward Surge Current t= 1.0s IFSM 500 mA Thermal Resistance (Junction to Ambient) (Note 1) R JA 330 C/W Junction and Storage Temperature Range TJ, TSTG -55 to + 150 C Electrical Characteristics Type Number Symbol Min Max Units Reverse Breakdown Voltage I = 100A V(BR) 75 - V R - 0.9 IF= 1.0mA IF= 10mA - 1.0 Forward Voltage VF V - 1.1 IF= 50mA IF= 150mA - 1.25 Reverse Leakage Current V = 75V IR - 5 nA R CJ - 2.0 pF Junction Capacitance VR=0, f=1.0MHz Reverse Recovery Time (Note 2) Trr - 3.0 ns Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: I =10mA, I =10mA, R =100 I =1mA F R L RR Version : B09 BAS116 225mW SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Reverse Current vs Reverse Voltage FIG 1 Typical Forward Characteristics 10000 1000 100 1000 Ta=25C 10 Ta=25C 100 1 10 0.1 0.01 1 0 20 40 60 80 100 120 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Reverse Volatge (V) Instantaneous Forward Volatge (V) FIG 3 Admissible Power Dissipation Curve FIG 4 Typical Junction Capacitance 250 2 1.6 200 150 1.2 100 0.8 50 0.4 0 0 0 25 50 75 100 125 150 175 0 4 8 12 16 20 Reverse Voltage (V) Ambient Temperature (C) Version : B09 Power Dissipation (mW) Instantaneous Forward Current (mA) Reverse Current (uA) Junction Capacitance (pF)