BGU8006,115 NXP

BGU8006 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 2 12 December 2012 Product data sheet 1. Product profile 1.1 General description The BGU8006 is a Low Noise Amplifier (LNA) for GNSS receiver applications. It comes as extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8006 requires one external matching inductor and one external decoupling capacitor. The BGU8006 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. At low jamming power levels it delivers 17.2 dB gain at a noise figure of 0.60 dB. During high jamming power levels, resulting for example from a cellular transmit burst, it temporarily increases its bias current to improve sensitivity. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Covers full GNSS L1 band, from 1559 MHz to 1610 MHz Noise figure (NF) = 0.60 dB Gain 17.2 dB High input 1 dB compression point of 7.5 dBm High out of band IP3 of 6 dBm i Supply voltage 1.5 V to 3.1 V Optimized performance at very low 3.6 mA supply current Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design Requires only one input matching inductor and one supply decoupling capacitor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Extremely small Wafer Level Chip Scale Package (WLCSP) 0.65 0.44 0.2 mm 6 solder bumps 0.22 mm bump pitch 180 GHz transit frequency - SiGe:C technology BGU8006 NXP Semiconductors SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass 1.3 Applications LNA for GPS, GLONASS, Galileo and Compass (BeiDou) in smart phones, feature phones, tablet, digital still cameras, digital video cameras, RF front-end modules, complete GNSS modules and personal health applications. 1.4 Quick reference data Table 1. Quick reference data = 2.85 V P < 40 dBm T =25 C input matched to 50 using a f = 1575 MHz V CC i amb 5.6 nH inductor, see Figure 1 unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V supply voltage 1.5 - 3.1 V CC I supply current V 0.8 V CC I(ENABLE) P < 40 dBm - 3.6 - mA i P = 20 dBm - 8.4 - mA i G power gain P < 40 dBm - 17.2 - dB p i P = 20 dBm - 19.0 - dB i 1 NF noise figure P < 40 dBm -0.60- dB i 2 P < 40 dBm -0.65- dB i P input power at 1 dB gain compression f = 1575 MHz - 7.5 - dBm i(1dB) 3 IP3 input third-order intercept point f = 1575 MHz -6- dBm i 1 PCB losses are subtracted. 2 Including PCB losses. 3 f = 1713 MHz f = 1851 MHz P = 20 dBm per carrier. 1 2 i 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1GND RF 2RF IN 3 ENABLE 4GND 5V CC 6RF OUT Bump side view 3. Ordering information Table 3. Ordering information Type Package number Name Description Version BGU8006 WLCSP6 extremely small wafer level chip scale package 6 solder bumps WLCSP6 0.22 mm bump pitch body 0.65 0.44 0.2 mm OM7829 EVB BGU8006 evaluation board BGU8006 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 12 December 2012 2 of 19