BGY66B,112 NXP

BGY66B 120 MHz, 25 dB gain reverse amplifier Rev. 5 28 September 2010 Product data sheet 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module designed for applications in CATV systems with a bandwidth of 5 MHz to 120 MHz operating with a voltage supply of 24 V (DC). CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability 1.3 Applications Intended as a reverse amplifier for use in two-way systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit G power gain f = 10 MHz 24.5 - 25.5 dB p 1 I total current consumption (DC) V =24V 115 - 135 mA tot B 1 The module normally operates at V = 24 V, but is able to withstand supply transients up to 30 V. BBGY66B NXP Semiconductors 120 MHz, 25 dB gain reverse amplifier 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 input 5 2 common 13 57 9 1 9 3 common 5+V B 23 78 7 common sym095 8 common 9output 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGY66B - Rectangular single-ended package aluminium flange SOT115J 2 vertical mounting holes 2 6-32 UNC and 2 extra horizontal mounting holes 7 gold-plated in-line leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V RF input voltage - 65 dBmV i T storage temperature 40 +100 C stg T mounting base temperature 20 +100 C mb BGY66B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 5 28 September 2010 2 of 8