BGU8010 1 2 6 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 24 December 2013 Product data sheet 1. Product profile 1.1 General description The BGU8010 is a Low Noise Amplifier (LNA) for GNSS receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8010 requires one external matching inductor and one external decoupling capacitor. The BGU8010 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. At low jamming power levels it delivers 16.1 dB gain at a noise figure of 0.85 dB. During high jamming power levels, resulting for example from a cellular transmit burst, it temporarily increases its bias current to improve sensitivity. 1.2 Features and benefits Covers full GNSS L1 band, from 1559 MHz to 1610 MHz Noise figure (NF) = 0.85 dB Gain 16.1 dB High input 1 dB compression point of 9 dBm High out of band IP3 of 3 dBm i Supply voltage 1.5 V to 3.1 V Optimized performance at very low supply current of 3.1 mA Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design Requires only one input matching inductor and one supply decoupling capacitor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in a 6-pins leadless package 1.1 mm 0.9 mm 0.47 mm 0.4 mm pitch: SOT1230 180 GHz transit frequency - SiGe:C technology Moisture sensitivity level of 1 1.3 Applications LNA for GPS, GLONASS, Galileo and Compass (BeiDou) in smart phones, feature phones, tablets, digital still cameras, digital video cameras, RF front-end modules, complete GNSS modules and personal health applications.BGU8010 NXP Semiconductors SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass 1.4 Quick reference data Table 1. Quick reference data f = 1575 MHz V = 2.85 V P < 40 dBm T =25 C input matched to 50 using a CC i amb 6.8 nH inductor, see Figure 1 unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V supply voltage 1.5 - 3.1 V CC I supply current - 3.2 - mA CC G power gain no jammer - 16.1 - dB p 1 NF noise figure no jammer -0.85- dB P input power at 1 dB - 9- dBm i(1dB) gain compression 2 IP3 input third-order -3 - dBm i intercept point 3 -0 - dBm 1 PCB losses are subtracted. 2 f = 1713 MHz f = 1851 MHz, P = 20 dBm per carrier. 1 2 i 3 f = 1713 MHz f = 1851 MHz P = 20 dBm at f P = 65 dBm at f . 1 2 i 1 i 2 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1GND 2V CC 3RF OUT 4GND RF 5RF IN DDD 6 ENABLE Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGU8010 XSON6 plastic very thin small outline package no leads SOT1230 6 terminals body 1.1 0.9 0.47 mm OM7822 EVB BGU8010 evaluation board, MMIC only - 4. Marking Table 4. Marking codes Type number Marking code BGU8010 B BGU8010 All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 24 December 2013 2 of 19