BGX7100HN/1,118 NXP

3D BGX7100 Transmitter IQ modulator Rev. 5 3 September 2012 Product data sheet 1. General description The BGX7100 device combines high performance, high linearity I and Q modulation paths for use in radio frequency up-conversion. It supports RF frequency outputs in the range from 400 MHz to 4000 MHz. The BGX7100 IQ modulator is performance independent of the IQ common mode voltage. The modulator provides a typical output power at 1 dB gain compression (P ) value of 12 dBm and a typical 27 dBm output third-order intercept L(1dB) point (IP3 ). Unadjusted sideband suppression and carrier feedthrough are 50 dBc and o 45 dBm respectively. A hardware control pin provides a fast power-down/power-up mode functionality which allows significant power saving. 2. Features and benefits 400 MHz to 4000 MHz frequency operating range Stable performance across 0.25 V to 3.3 V common-mode voltage input Independent low-current power-down hardware control pin 12 dBm output 1 dB compression point 27 dBm output third-order intercept point (typical) Integrated active biasing Single 5 V supply 180 differential IQ input impedance Matched 50 single-ended RF output impedance ESD protection at all pins 3. Applications Mobile network infrastructure Microwave and broadband RF and IF applications Industrial applications 4. Device family The BGX7100 operates in the RF frequency range of 400 MHz to 4000 MHz with modulation bandwidths up to 400 MHz. HVQFN24BGX7100 NXP Semiconductors Transmitter IQ modulator 5. Ordering information Table 1. Ordering information Type number Package Name Description Version BGX7100HN HVQFN24 plastic thermal enhanced very thin quad flat package no leads 24 SOT616-3 terminals body 4 4 0.85 mm 6. Functional diagram BGX7100 I MODULATION IN 0 LOCAL OSCILLATOR IN RF OUT 90 Q MODULATION IN 001aao016 Fig 1. Functional block diagram Differential I and Q baseband inputs are each fed to an associated upconverter mixer. The Local Oscillator (LO) carrier input is buffered and split into 0 degree and 90 degree signals. The in-phase signal is passed to the I mixer and the 90 degree phase-changed signal is passed to the Q mixer. The outputs of the mixers are summed to produce the resulting RF output signal. 7. Pinning information 7.1 Pinning The BGX7100 device pinout is designed to allow easy interfacing when mounted on a Printed-Circuit Board (PCB). When viewing the device from above, the two differential IQ baseband input paths are at the top and bottom. The common LO input is at the left and the RF output at the right. Multiple power and ground pins allow for independent supply domains, improving isolation between blocks. A small package footprint is chosen to reduce bond-wire induced series inductance in the RF ports. The input and output pin matching is described in Section 12 Application information. BGX7100 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 5 3 September 2012 2 of 38