BGY588N,112 NXP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGY588N 550 MHz, 34.5 dB gain push-pull amplifier Product specification 2001 Oct 22 Supersedes data of 2000 Feb 14NXP Semiconductors Product specification 550 MHz, 34.5 dB gain push-pull amplifier BGY588N FEATURES PINNING - SOT115J Excellent linearity PIN DESCRIPTION Extremely low noise 1 input Silicon nitride passivation 2 common Rugged construction 3 common TiPtAu metallized crystals ensure optimal reliability. 5+V B 7 common APPLICATIONS 8 common 9 output CATV systems in the 40 to 550 MHz frequency range and intended for use as a line-extender. PIN CONFIGURATION DESCRIPTION Hybrid amplifier module in a SOT115J package operating handbook, halfpage 2 8 with a voltage supply of 24 V (DC). 1 35 7 9 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT G power gain f = 50 MHz 34 34.5 35 dB p f = 550 MHz 35 35.5 36 dB I total current consumption (DC) V = 24 V 310 325 340 mA tot B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT V RF input voltage 55 dBmV i T storage temperature 40 +100 C stg T operating mounting base temperature 20 +100 C mb 2001 Oct 22 2