BGU8M1X NXP

BGU8M1 1 2 6 SiGe:C low-noise amplifier MMIC for LTE Rev. 3 16 January 2017 Product data sheet 1. General description The BGU8M1 is, also known as the LTE1001M, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8M1 requires one external matching inductor. The BGU8M1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 13 dB gain at a noise figure of 0.8 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity. The BGU8M1 is optimized for 1805 MHz to 2200 MHz. 2. Features and benefits Operating frequency from 1805 MHz to 2200 MHz Noise figure = 0.8 dB Gain = 13 dB High input 1 dB compression point of 2 dBm High in band IP3 of 6 dBm i Supply voltage 1.5 V to 3.1 V Self-shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 5 mA Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design Require only one input matching inductor Output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in a6-pin leadless package 1.1 mm 0.7 mm 0.37 mm 0.4 mm pitch: SOT1232 180 GHz transit frequency - SiGe:C technology Moisture sensitivity level 1NXP Semiconductors BGU8M1 SiGe:C low-noise amplifier MMIC for LTE 3. Applications LNA for LTE reception in smart phones Feature phones Tablet PCs RF front-end modules 4. Quick reference data Table 1. Quick reference data f = 1843 MHz V = 2.8 V V 0.8 V T = 25 C input matched to 50 using a 3.3 nH inductor CC I(ENABLE) amb unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit supply voltage 1.5 - 3.1 V V CC supply current 3.0 5.0 7.0 mA I CC 1 power gain - 13.5 - dB G p 1 2 - 0.8 - dB NF noise figure 1 input power at 1 dB gain compression - 2 - dBm P i(1dB) 1 input third-order intercept point - 4 - dBm IP3 i 1 E-UTRA operating band 3 (1805 MHz to 1880 MHz). 2 PCB losses are subtracted. 5. Ordering information Table 2. Ordering information Type number Package Name Description Version BGU8M1 XSON6 plastic extremely thin small outline package no leads 6 terminals SOT1232 body 1.1 0.7 0.37 mm 6. Marking Table 3. Marking codes Type number Marking code BGU8M1 E BGU8M1 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2017. All rights reserved. Product data sheet Rev. 3 16 January 2017 2 of 11