BGU8L1X NXP

BGU8L1 1 2 6 SiGe:C low-noise amplifier MMIC for LTE Rev. 3 16 January 2017 Product data sheet 1. General description The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external matching inductor. The BGU8L1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels, it delivers 14 dB gain at a noise figure of 0.7 dB. During high-power levels, it temporarily increases its bias current to improve sensitivity. The BGU8L1 is optimized for 728 MHz to 960 MHz. 2. Features and benefits Operating frequency from 728 MHz to 960 MHz Noise figure = 0.7 dB Gain = 14 dB High input 1 dB compression point of 3 dBm High in band IP3 of 2 dBm i Supply voltage 1.5 V to 3.1 V Self-shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 4.6 mA Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design Require only one input matching inductor Output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in a 6-pin leadless package 1.1 mm 0.7 mm 0.37 mm 0.4 mm pitch: SOT1232 180 GHz transit frequency - SiGe:C technology Moisture sensitivity level 1NXP Semiconductors BGU8L1 SiGe:C low-noise amplifier MMIC for LTE 3. Applications LNA for LTE reception in smart phones Feature phones Tablet PCs RF front-end modules 4. Quick reference data Table 1. Quick reference data f = 882 MHz V = 2.8 V V 0.8 V T = 25 C input matched to 50 using a 15 nH inductor CC I(ENABLE) amb unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit supply voltage 1.5 - 3.1 V V CC supply current 2.6 4.6 6.6 mA I CC 1 power gain 12.5 14.5 16.5 dB G p 1 2 3 - 0.7 1.3 dB NF noise figure 1 3 input power at 1 dB gain compression 7.0 3.0 - dBm P i(1dB) 1 3 input third-order intercept point 3.0 +2.0 - dBm IP3 i 1 E-UTRA operating band 5 (869 MHz to 894 MHz). 2 PCB losses are subtracted. 3 Guaranteed by device design not tested in production. 5. Ordering information Table 2. Ordering information Type number Package Name Description Version BGU8L1 XSON6 plastic extremely thin small outline package no leads 6 terminals SOT1232 body 1.1 0.7 0.37 mm BGU8L1 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2017. All rights reserved. Product data sheet Rev. 3 16 January 2017 2 of 11