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LX5511
LX5511
LX5511
TM InGaP HBT 2.3 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
KEY FEATURES
DESCRIPTION
Advanced InGaP HBT
The Microsemi LX5511 is a power For 20dBm OFDM output power
2.3-2.5GHz Operation
amplifier that is optimized for WLAN (64QAM, 54Mbps), the PA provides a
Single-Polarity 3.3V Supply
applications in the 2.3GHz 2.5GHz low EVM (Error-Vector Magnitude) of
Quiescent Current 90mA
frequency range. The LX5511 Power less than 3.0%, and consumes 170mA
Power Gain 26 dB
Amplifier is implemented as a two- total DC current..
Total Current 150mA for
stage monolithic microwave integrated The LX5511 is available in a 16-pin
Pout=18 dBm OFDM
circuit (MMIC) with active bias and 3mmx3mm micro-lead quad package
EVM<3 %, 2.4% Typical
output pre-matching. (MLPQ). The compact footprint, low
54Mbps/64QAM
The device is manufactured with an profile, and thermal capability of the Small Footprint: 3x3mm2
Height 0.9mm
InGaP/GaAs Heterojunction Bipolar MLPQ package makes the LX5511 an
Transistor (HBT) IC process ideal solution for medium-gain power
(MOCVD). With a single low voltage amplifier requirements for IEEE
APPLICATIONS
supply of 3.3V 26dB power gain 802.11b/g applications
IEEE 802.11b/g
between 2.3-2.5GHz, at a low
quiescent current of 90mA.
IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM
TM
INFORMATION
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The full data sheet for this device contains proprietary information.
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