X-On Electronics has gained recognition as a prominent supplier of BGU8019X RF Amplifier across the USA, India, Europe, Australia, and various other global locations. BGU8019X RF Amplifier are a product manufactured by NXP. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

BGU8019X NXP

BGU8019X electronic component of NXP
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Part No.BGU8019X
Manufacturer: NXP
Category: RF Amplifier
Description: NXP Semiconductors RF Amplifier Low Noise Amplifier MMIC for GPS
Datasheet: BGU8019X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.297 ea
Line Total: USD 0.3 
Availability - 7997
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7997
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.297
10 : USD 0.2783
100 : USD 0.2211
500 : USD 0.1969
1000 : USD 0.1672
5000 : USD 0.154
10000 : USD 0.1496
25000 : USD 0.1496
50000 : USD 0.1496

   
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We are delighted to provide the BGU8019X from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BGU8019X and other electronic components in the RF Amplifier category and beyond.

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BGU8019 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo, and Compass Rev. 5 21 May 2021 Product data sheet 1 Product profile 1.1 General description The BGU8019 is, also known as the GPS1202M, a Low Noise Amplifier (LNA) for GNSS receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8019 requires one external matching inductor. The BGU8019 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. At low jamming power levels it delivers 18.5 dB gain at a noise figure of 0.55 dB. During high jamming power levels, resulting for example from a cellular transmit burst, it temporarily increases its bias current to improve sensitivity. 1.2 Features and benefits Cover full GNSS L1 band, from 1559 MHz to 1610 MHz Noise figure (NF) = 0.55 dB Gain = 18.5 dB High input 1 dB compression point of -7 dBm High out of band IP3 of 6 dBm i Supply voltage 1.5 V to 3.1 V Self-shielding package concept Integrated supply decoupling capacitor Optimized performance at a supply current of 4.6 mA Power-down mode current consumption < 1 A Integrated temperature stabilized bias for easy design Require only one input matching inductor Input and output DC decoupled ESD protection on all pins (HBM > 2 kV) Integrated matching for the output Available in 6-pins leadless package 1.1 mm 0.7 mm 0.37 mm 0.4 mm pitch: SOT1232 180 GHz transit frequency - SiGe:C technology Moisture sensitivity level of 1 XSON6NXP Semiconductors BGU8019 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo, and Compass 1.3 Applications LNA for GPS, GLONASS, Galileo, and Compass (BeiDou) in: smart phones feature phones, tablet PCs digital still cameras digital video cameras RF front-end modules complete GNSS modules personal health applications 1.4 Quick reference data Table 1.Quick reference data f = 1575 MHz V = 2.85 V V 0.8 V P < -40 dBm T = 25 C input matched to 50 CC I(ENABLE) i amb using a 6.8 nH inductor, see Figure 1 unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V supply voltage 1.5 - 3.1 V CC I supply current - 4.6 6.6 mA CC G power gain no jammer 16.5 18.5 20.5 dB p 1 NF noise figure P = -40 dBm, no jammer - 0.55 1.1 dB i P input power at 1 dB gain -11 -7 - dBm i(1dB) compression 2 IP3 input third-order intercept point 0 6 - dBm i 3 0 6 - dBm 1 PCB losses are subtracted. 2 f = 1713 MHz f = 1851 MHz P = -20 dBm per carrier 1 2 i 3 f = 1713 MHz, P = -20 dBm f = 1850 MHz, P = -65 dBm 1 i 2 i BGU8019 All information provided in this document is subject to legal disclaimers. NXP B.V. 2021. All rights reserved. Product data sheet Rev. 5 21 May 2021 2 / 19

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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