BUJ100LR,126 NXP

BUJ100LR NPN power transistor Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package. 1.2 Features and benefits Fast switching High voltage capability of 700 V 1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic lighting ballasts Off-line self-oscillating power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current DC see Figure 2 --1 A C P total power T 25 C see Figure 1 --2.1 W tot lead dissipation V collector-emitter peak V=0V --700V CESM BE voltage Static characteristics h DC current gain V =5V I =0.8 A 57.5 20 FE CE C T =25C see Figure 8 lead see Figure 9BUJ100LR NXP Semiconductors NPN power transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector 3E emitter B E sym123 3 2 1 SOT54 (TO-92) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ100LR TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 700 V CESM BE V collector-base voltage I = 0 A - 700 V CBO E V collector-emitter voltage I = 0 A - 400 V CEO B I collector current DC see Figure 2 -1 A C I peak collector current - 2 A CM I base current DC - 0.5 A B I peak base current - 1 A BM P total power dissipation T 25 C see Figure 1 -2.1 W tot lead T storage temperature -65 150 C stg T junction temperature - 150 C j V emitter-base voltage I = 0 A I(Emitter) = 10 mA - 9 V EBO C BUJ100LR All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 29 July 2010 2 of 12