BUJ103AD,118 NXP

BUJ103AD Silicon diffused power transistor Rev. 3 18 October 2016 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control systems 1.4 Quick reference data V 700 V I 4 A CESM C P 80 W h = 12.5 (typ) tot FEsat 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1 base mb C 1 2 collector B 3emitter mb mounting base connected to collector E sym123 SOT428 (D-PAK) 1 It is not possible to make a connection to pin 2 of the SOT428 (D-PAK) package.WeEn Semiconductors BUJ103AD Silicon diffused power transistor 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUJ103AD D-PAK plastic single-ended surface mounted package 3 leads (one lead cropped) SOT428 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V peak collector-emitter voltage V = 0 V - 700 V CESM BE V collector-base voltage open emitter - 700 V CBO V collector-emitter voltage open base - 400 V CEO I collector current (DC) - 4 A C I peak collector current - 8 A CM I base current (DC) - 2 A B I peak base current - 4 A BM P total power dissipation T 25 C see Figure 1 -80 W tot mb T storage temperature 65 +150 C stg T junction temperature - 150 C j 001aab993 120 P der (%) 80 40 0 0 40 80 120 160 T (C) mb P tot P % = ------------------------- 100% der P tot25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature BUJ103AD All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet Rev.3 18 October 2016 2 / 10