BUJ302AD,118 NXP

BUJ302AD NPN power transistor 28 April 2018 Product data sheet 1. General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 2. Features and benefits Fast switching Low thermal resistance Surface mountable package Very high voltage capability Very low switching and conduction losses 3. Applications DC-to-DC converters High frequency electronic lighting ballasts Inverters Motor control systems 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I peak collector current Fig. 1 Fig. 2 Fig. 3 - - 8 A CM P total power dissipation T 25 C Fig. 4 - - 80 W tot mb V collector-emitter peak V = 0 V - - 1050 V CESM BE voltage Static characteristics h DC current gain I = 0.1 A V = 5 V T = 25 C 1 48 66 100 FE C CE mb Fig. 11 I = 0.8 A V = 3 V T = 25 C 1 25 42 50 C CE mb Fig. 12 1 Pulse test: pulse duration 300 s, duty cycle 2 %WeEn Semiconductors BUJ302AD NPN power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector 1 B 3 E emitter E mb C mounting base connected to sym123 collector DPAK (SOT428) 1 it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ302AD DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUJ302AD All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 28 April 2018 2 / 13