X-On Electronics has gained recognition as a prominent supplier of BUJ302AX Unclassified across the USA, India, Europe, Australia, and various other global locations. BUJ302AX Unclassified are a product manufactured by NXP. We provide cost-effective solutions for Unclassified, ensuring timely deliveries around the world.

BUJ302AX NXP

BUJ302AX electronic component of NXP
Images are for reference only
See Product Specifications
Part No.BUJ302AX
Manufacturer: NXP
Category: Unclassified
Description: TRANSISTOR, NPN, 4A, 1050V, TO220F
Datasheet: BUJ302AX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3104 ea
Line Total: USD 1.31

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 1
Multiples : 1
1 : USD 1.3104
10 : USD 0.8773
25 : USD 0.5636
100 : USD 0.4373
250 : USD 0.3717
500 : USD 0.3654

   
Manufacturer
Product Category
Transistor Polarity
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUJ302AX from our Unclassified category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUJ302AX and other electronic components in the Unclassified category and beyond.

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BUJ302AX NPN power transistor Rev. 02 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT186A (TO-220F) plastic package. 1.2 Features and benefits Fast switching Isolated package High voltage capability Low thermal resistance 1.3 Applications DC-to-DC converters Inverters High-frequency electronic lighting Motor control systems ballast applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current see Figure 1 see Figure 2 --4 A C see Figure 4 P total power T 25 C see Figure 3 --26 W tot h dissipation V collector-emitter V=0V --1050V CESM BE peak voltage Static characteristics h DC current gain I =0.1 A V =5V T =25C 48 66 100 FE C CE h see Figure 11 I =0.8 A V =3V T =25C 25 42 50 C CE h see Figure 12 TO-220FBUJ302AX NXP Semiconductors NPN power transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base mb C 2 C collector 3E emitter B mb n.c. isolated E sym123 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ302AX TO-220F plastic single-ended package isolated heatsink mounted SOT186A 1 mounting hole 3-lead TO-220full pac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 1050 V CESM BE V collector-emitter voltage I = 0 A - 400 V CEO B I collector current see Figure 1 see Figure 2 see Figure 4 -4 A C I peak collector current - 8 A CM I base current DC - 2 A B I peak base current - 4 A BM P total power dissipation T 25 C see Figure 3 -26 W tot h T storage temperature -65 150 C stg T junction temperature - 150 C j V emitter-base voltage I =0A I =2A t < 10 ms - 24 V EBO C E p BUJ302AX All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 28 March 2011 2 of 13

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