BUJ303B,127 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V Collector-emitter voltage peak value V = 0 V - 1050 V CESM BE V Collector-Base voltage (open emitter) - 1050 V CBO V Collector-emitter voltage (open base) - 400 V CEO I Collector current (DC) - 5 A C I Collector current peak value - 10 A CM P Total power dissipation T 25 C - 100 W tot mb V Collector-emitter saturation voltage I = 3 A I = 1 A 0.25 1.5 V CEsat C B h DC current gain I = 3 A V = 1.5 V 10.5 - FEsat C CE t Fall time I =2.5 A,I =0.5 A 300 - ns f C B1 PINNING - TO220AB PIN CONFIGURATION SYMBOL mb PIN DESCRIPTION 1 base 2 collector 3 emitter m b collector 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Collector to emitter voltage V = 0 V - 1050 V CESM BE V Collector to emitter voltage (open base) - 400 V CEO V Collector to base voltage (open emitter) - 1050 V CBO I Collector current (DC) - 5 A C I Collector current peak value - 10 A CM I Base current (DC) - 2 A B I Base current peak value - 4 A BM P Total power dissipation T 25 C - 100 W tot mb T Storage temperature -65 150 C stg T Junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Junction to mounting base - 1.25 K/W th j-mb R Junction to ambient in free air 60 - K/W th j-a March 2018 1 Rev 1.100