BUJ403A,127 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BUJ403A Silicon Diffused Power Transistor Product specification October 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V Collector-emitter voltage peak value V = 0 V - 1200 V CESM BE V Collector-Base voltage (open emitter) - 1200 V CBO V Collector-emitter voltage (open base) - 550 V CEO I Collector current (DC) - 6 A C I Collector current peak value - 10 A CM P Total power dissipation T 25 C - 100 W tot mb V Collector-emitter saturation voltage I = 2 A I = 0.4 A 0.15 1.0 V CEsat C B h DC current gain I = 3 A V = 5 V 15.5 - FEsat C CE t Fall time I =2.5 A I =0.5 A 170 300 ns f C B1 PINNING - TO220AB PIN CONFIGURATION SYMBOL mb PIN DESCRIPTION 1 base 2 collector 3 emitter tab collector 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Collector to emitter voltage V = 0 V - 1200 V CESM BE V Collector to emitter voltage (open base) - 550 V CEO V Collector to base voltage (open emitter) - 1200 V CBO I Collector current (DC) - 6 A C I Collector current peak value - 10 A CM I Base current (DC) - 3 A B I Base current peak value - 5 A BM P Total power dissipation T 25 C - 100 W tot mb T Storage temperature -65 150 C stg T Junction temperature - 150 C j THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Junction to mounting base - 1.25 K/W th j-mb R Junction to ambient in free air 60 - K/W th j-a October 2018 1 Rev 1.300