X-On Electronics has gained recognition as a prominent supplier of BUJD105AD,118 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BUJD105AD,118 Bipolar Transistors - BJT are a product manufactured by NXP. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BUJD105AD,118 NXP

BUJD105AD,118 electronic component of NXP

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Part No.	BUJD105AD,118
Manufacturer:	NXP
Category:	Bipolar Transistors - BJT
Description:	Transistors Bipolar - BJT TRANS NPN 700V 8A
Datasheet:	BUJD105AD,118 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

7500: USD 0.3322 ea
Line Total: USD 2491.5

Availability - 0

MOQ: 7500 Multiples: 7500
Pack Size: 7500

BUJD105AD,118 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 28 Jan to Thu. 30 Jan MOQ : 7500 Multiples : 7500	7500 : USD 0.3322

We are delighted to provide the BUJD105AD,118 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUJD105AD,118 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

BUJD105AD NPN power transistor with integrated diode 13 July 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti- parallel E-C diode in a SOT428 (DPAK) surface mountable plastic package. 2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Surface mountable plastic package Very low switching and conduction losses 3. Applications DC-to-DC converters Electronic lighting ballasts Inverters Motor control systems 4. Pinning information Table 1. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector 1 B 3 E emitter E sym131 DPAK (SOT428) 1 It is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.WeEn Semiconductors BUJD105AD NPN power transistor with integrated diode 5. Ordering information Table 2. Ordering information Type number Package Name Description Version BUJD105AD DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BUJD105AD All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 13 July 2018 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

FR9 may also be referenced as

Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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Manufacturer NXP NXP
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
RoHS - XON Y Y
Technology Si Si
Mounting Style Smd/Smt Smd/Smt
Package / Case DPAK DPAK
Transistor Polarity Npn Npn
Configuration Single Single
Maximum DC Collector Current 8 A 8 A
Collector- Emitter Voltage VCEO Max 400 V 400 V
Collector- Base Voltage VCBO 700 V 700 V
Collector-Emitter Saturation Voltage 0.35 V 0.35 V
Pd - Power Dissipation 80 W 80 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Packaging Reel Reel
Brand Nxp Semiconductors Nxp Semiconductors
Dc Collector/Base Gain Hfe Min 8 At 4 A At 5 V, 10 At 1 Ma At 5 V, 13 At 500 Ma At 5 V 8 At 4 A At 5 V, 10 At 1 Ma At 5 V, 13 At 500 Ma At 5 V
Maximum Power Dissipation 80 W 80 W
Factory Pack Quantity : 2500 2500
Dc Current Gain Hfe Max 36 36
Height 2.38 mm 2.38 mm
Length 6.73 mm 6.73 mm
Width 6.22 mm 6.22 mm
Cnhts 8541290000 8541290000
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type Bjts - Bipolar Transistors Bjts - Bipolar Transistors
Subcategory Transistors Transistors
Taric 8541290000 8541290000