BYW29E-200/B NXP

BYW29E-200 Ultrafast power diode 17 September 2013 Product data sheet 1. General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits Fast switching Guaranteed ESD capability High thermal cycling performance Low on-state loss Low thermal resistance Rugged: reverse voltage surge capability Soft recovery minimizes power-consuming oscillations 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 200 V RRM voltage I average forward SQW; = 0.5 ; T 128 C; Fig. 1; - - 8 A F(AV) mb current Fig. 2 Static characteristics V forward voltage I = 8 A; T = 150 C; Fig. 4 - 0.8 0.895 V F F j Dynamic characteristics t reverse recovery time I = 1 A; V = 30 V; dI /dt = 100 A/s; - 20 25 ns rr F R F T = 25 C; ramp recovery; Fig. 5; Fig. 7 j Electrostatic discharge V electrostatic discharge HBM; C = 250 pF; R = 1.5 k - - 8 kV ESD voltage Scan or click this QR code to view the latest information for this product TO-220ACNXP Semiconductors BYW29E-200 Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 001aaa020 2 A anode mb mb mounting base; cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYW29E-200 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting SOD59 hole; 2-lead TO-220AC 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 200 V RRM V crest working reverse voltage - 200 V RWM V reverse voltage - 200 V R I average forward current SQW; = 0.5 ; T 128 C; Fig. 1; - 8 A F(AV) mb Fig. 2 I repetitive peak forward current SQW; = 0.5 ; t = 25 s; T 128 C - 16 A FRM p mb I non-repetitive peak forward SIN; t = 8.3 ms; T = 25 C - 88 A FSM p j(init) current SIN; t = 10 ms; T = 25 C - 80 A p j(init) I repetitive peak reverse current = 0.001 ; t = 2 s - 0.2 A RRM p I non-repetitive peak reverse t = 100 s - 0.2 A RSM p current T storage temperature -40 150 C stg BYW29E-200 All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 17 September 2013 2 / 10