X-On Electronics has gained recognition as a prominent supplier of J109,126 JFET across the USA, India, Europe, Australia, and various other global locations. J109,126 JFET are a product manufactured by NXP. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

J109,126 NXP

J109,126 electronic component of NXP
J109,126 NXP
J109,126 JFET
J109,126  Semiconductors

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Part No. J109,126
Manufacturer: NXP
Category: JFET
Description: Trans JFET N-CH 25V 40mA Si 3-Pin SPT Ammo
Datasheet: J109,126 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
42: USD 0.8069 ea
Line Total: USD 33.89 
Availability - 0
MOQ: 42  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the J109,126 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the J109,126 and other electronic components in the JFET category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET J108 J109 J110 N-channel silicon junction FETs Product specication 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07Philips Semiconductors Product specication N-channel silicon junction FETs J108 J109 J110 FEATURES PINNING - TO-92 High speed switching PIN SYMBOL DESCRIPTION Interchangeability of drain and source connections 1 g gate Low R at zero gate voltage (<8 for J108). DSon 2 s source 3 d drain APPLICATIONS Analog switches Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g s N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage - 25 V DS V gate-source cut-off voltage I =1 A V =5V GSoff D DS J108 - 3 - 10 V J109 - 2 -6V J110 - 0.5 -4V I drain current V = 0 V =5V DSS GS DS J108 80 - mA J109 40 - mA J110 10 - mA P total power dissipation up to T =50 C - 400 mW tot amb 1996 Jul 30 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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