Product Technical OrOrdderer Folder Support NowNow InterFET VCR7N VCR7N Voltage Controlled Resistor JFET TO-72 Bottom View Features InterFET N0001H Geometry Gate 3 Low Leakage: 0.25 pA Typical Low Input Capacitance: 2.0 pF Typical Drain 4 Case 2 High Input Impedance RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications SOT23 Top View Voltage Controlled Resistor Source 1 Description Gate 3 The -15V InterFET VCR7N Voltage Controlled Resistor JFET are targeted for ultra high input Drain 2 impedance applications. Gate leakages are less than 1pA at room temperatures. The resistance range of the VCR7N is 4,000 Ohms to 8,000 Ohms. TO-92 Bottom View The TO-72 package is hermetically sealed and suitable for military applications. Gate 3 Drain 2 Source 1 Product Summary Parameters VCR7N Min Unit BV Gate to Source Breakdown Voltage -15 V GSS VGS(off) Gate to Source Cutoff Voltage -2.5 V r Drain to Source ON Resistance 4,000 ds(on) Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging VCR7N Through-Hole TO-72 Bulk PNVCR7N Through-Hole TO-92 Bulk SMPVCR7N Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPVCR7NTR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel VCR7NCOT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack VCR7NCFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35004.R00Product Technical OrOrdderer Folder Support NowNow InterFET VCR7N Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -15 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) VCR7N Parameters Conditions Min Max Unit Gate to Source V(BR)GSS IG = -1A,VDS = 0V -15 V Breakdown Voltage Gate to Source IGSS VGS = -15V, VDS = 0V -0.1 nA Reverse Current Gate to Source V V = 10V, I = -1A -2.5 -5 V GS(OFF) DS D Cutoff Voltage Dynamic Characteristics ( TA = 25C, Unless otherwise specified) VCR7N Parameters Conditions Min Max Unit Drain to Source ID = 0A, VGS = 0V, r 4000 8000 ds(on) ON Resistance f = 1kHz Drain Gate V = 10V, I = 0A, DG S Cdg 1.5 pF Capacitance f = 1MHz Source Gate VDG = 10V, ID = 0A, C 1.5 pF sg Capacitance f = 1MHz VCR7N 2 of 5 InterFET Corporation Document Number: IF35004.R00 www.InterFET.com December, 2018