Product Technical OrOrdderer Folder Support NowNow InterFET J270-1 J270, J271 P-Channel JFET Features SOT23 Top View InterFET P0099F Geometry Low Noise: 6 nV/Hz Typical Source 1 RoHS Compliant SMT, TH, and Bare Die Package options. Gate 3 Applications Drain 2 Analog Switch Sample and Hold Low Noise, High Gain Amplifier TO-92 Bottom View Description 3 Drain The -30V InterFET J270 and J271 JFET is targeted for low noise high gain amplifiers and switch Gate 2 applications. The J270 has a cutoff voltage of less Source 1 than 2.0V ideal for low-level power supplies. Product Summary Parameters J270 Min J271 Min Unit BVGSS Gate to Source Breakdown Voltage 30 30 V IDSS Drain to Source Saturation Current -2 -6 mA V Gate to Source Cutoff Voltage 0.5 1.5 V GS(off) G Forward Transconductance 6 8 mS fs Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging J270 J271 Through-Hole TO-92 Bulk SMPJ270 SMPJ271 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMPJ270TR SMPJ271TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel J270COT J271COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack J270CFT J271CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35090.R00Product Technical OrOrdderer Folder Support NowNow InterFET J270-1 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage 30 V I Continuous Forward Gate Current 50 mA FG P Continuous Device Power Dissipation 360 mW D P Power Derating 2.8 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) J270 J271 Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = 1A 30 30 V Breakdown Voltage Gate to Source IGSS VGS = 10V, VDS = 0V 200 200 pA Reverse Current Gate to Source VGS(OFF) VDS = -10V, VGS = 0V 0.5 2 1.5 4.5 V Cutoff Voltage Drain to Source V = 0V, V = -10V GS DS IDSS -2 15 -6 -50 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) J270 J271 Parameters Conditions Min Max Min Max Unit Forward GFS VDS = -10V, VGS = 0V, f = 1kHz 6 15 8 18 mS Transconductance Ciss Input Capacitance VDS = -10V, VGS = 0V, f = 1MHz 32 32 pF Reverse Transfer Crss VDS = -10V, VGS = 0V, f = 1MHz 4 4 pF Capacitance Noise Voltage VDS = 10V, ID = 5mA, f = 1kHz 6 (typ) 6 (typ) nV/ Hz en J270-1 2 of 4 InterFET Corporation Document Number: IF35090.R00 www.InterFET.com June, 2019